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<table border="0" cellpadding="3" cellspacing="1" width="100%" class="forumline"> <tr> <th class="thCornerL" width="22%" height="26">Autor</th> <th class="thCornerR">Wiadomość</th> </tr> <tr> <td width="22%" align="left" valign="top" class="row1"><span class="name"><a name=""></a><b>qvu464h5w</b></span></td> <td class="row1" height="28" valign="top"><table width="100%" border="0" cellspacing="0" cellpadding="0"> <tr> <td width="100%"><img src="http://picsrv.fora.pl/xeon/images/icon_minipost.gif" width="12" height="9" alt="Post" title="Post" border="0" /><span class="postdetails">Wysłany: Wto 4:18, 12 Kwi 2011<span class="gen"> </span> Temat postu: LED point light dotted facade</span></td> </tr> <tr> <td colspan="2"><hr /></td> </tr> <tr> <td colspan="2"><span class="postbody">Sapphire substrate has many advantages: First, the sapphire substrate production technology is mature, good quality components; Secondly, the stability of sapphire good to use in high-temperature growth process; Finally, the sapphire of high mechanical strength, easy to handle and cleaning. <br /> Therefore, most processes are generally on sapphire as a substrate. Figure 1 Example of the use made of sapphire LED chip. Use of sapphire as a substrate, there are some problems, such as lattice mismatch and thermal mismatch stress, which will generate a large number of defects in epitaxial layer, while the device for subsequent processing difficult. <br /> Sapphire is an insulator, the resistivity at room temperature is greater than 1011Ω?; Cm, in which case the vertical structure of the device can not be produced; usually produced in the epitaxial layer on the surface of n-and p-type electrode (as shown in Figure 1 shown). In the production of two electrodes on the surface, resulting in a reduction of the effective emitting area, while increasing the device fabrication process of photolithography and etching process,light signs, resulting in lower material utilization,menu board, the cost increase. <br /> Since P-type GaN doping difficulties,illuminated signage, the current widely used in the preparation of p-GaN metal transparent electrodes on the ways in which current spread, in order to achieve the purpose of uniform light. But the metal transparent electrode generally absorb about 30% to 40% of the light, while the chemical properties of GaN-based materials stability, high mechanical strength,LED outdoor sign, its not easy to etch, so the etching process of the need for better equipment,</span></td> </tr> </table></td> </tr> <tr> <td colspan="2" height="1" class="spaceRow"><img src="http://picsrv.fora.pl/xeon/images/spacer.gif" alt="" width="1" height="1" /></td> </tr> </table>
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